SK hynix today announced the completion of the industry’s most advanced 1 billion memory technology, fifth generation 10nm process technology. Together with Intel, the company has already started testing new DDR5 modules designed for Intel Xeon Scalable platforms. The new 1b nm process will be used for both server and consumer DDR5 memory, and later HBM3E and other memory types. DDR5 chips manufactured in 1bnm technology are expected to go into mass production in the second half of the year.
SK Hynix anticipates that validating DDR5 memory based on the 1 billion nanometer process will not be an issue. Accordingly press release, DDR5 RAM on the new chips now offers a data transfer rate of 6.4 Gbps, which is 33% better than the previous generation DDR5 products. More importantly, 1 billion DDR5 memory uses 20% less power than previous products. This is because the process uses a material with a high dielectric constant, which reduces leakage currents and improves the cells’ capacitive properties, the company says.
SK hynix also confirmed that the next-generation process will also be used for HBM3E memory. This increases processing speed up to 8 Gbps per pin, which is 25% better than HBM3 and 8x better than first-generation HBM memory. Chips for the HBM3E are scheduled to go into mass production in 2024.
The company stressed that the development of the latest 1 billion nm technology will enable the company to provide customers with high-performance and high-efficiency DRAM products. The company thus remains a leader among manufacturers of memory modules. Recall that Samsung recently announced the transition to a new memory production technology. The company announced the start of mass production of 16-gigabit DDR5 RAM chips based on 12nm-class process technology.