Samsung Electronics today announced the start of mass production of 16GB DDR5 DRAM chips based on the latest 12nm-class process technology. The use of this technology allows reducing the power consumption of chips and getting more chips from one board.
“Using a differentiated manufacturing process, Samsung’s industry-leading 12nm DDR5 DRAM delivers outstanding performance and power efficiency. Our latest DRAM release reflects our continued commitment to leading the DRAM market, not only with high-performance, high-capacity products that meet the computing market’s needs for processing big data, but also by commercializing next-generation solutions, the higher requirements support performance.– said Jooyoung Lee Executive Vice President of DRAM Products and Technology at Samsung Electronics.
Compared to the previous generation, Samsung’s new 12nm DDR5 DRAM reduces power consumption by 23% and improves wafer yield by 20%. Samsung points out that the high energy efficiency makes the process an ideal solution for global IT companies looking to reduce power consumption and CO2 emissions from their servers and data centers.
Samsung’s development of a 12nm-class process technology for manufacturing RAM chips was made possible by using a new material (dielectric) with a static permittivity greater than that of silicon dioxide (high k), which helps to increase the electrical capacity of the cell. A large capacitance increases the electrical potential difference in the data signals, making it easier to distinguish between them accurately.
The 12 nm DDR5 DRAM families offer speeds of up to 7.2 Gbit/s (DDR5-7200). Samsung stated that this RAM can handle two 30GB UHD movies in about a second.
Samsung completed its compatibility evaluation of 16GB DDR5 DRAM with AMD platforms last December. It is planned to use the new storage line in data centers, for computation in the field of artificial intelligence and a variety of other tasks.