The Israeli company Weebit Nano, a developer of resistive memory (ReRAM), reportedthat significant progress has been made in the movement towards mass production of new and promising storage technology. At the experimental facilities of the French institute CEA-Leti, ReRAM arrays were first produced on 300-mm wafers using a 28-nm process technology.
The previous products of the Weebit and CEA-Leti partnership were ReRAM arrays on 200mm wafers using a 40nm process. Mastering finer technical processes on large-diameter plates is a significant step forward, which allowed the company to declare this as a quantum leap.
Unfortunately, Weebit did not disclose the characteristics of the arrays. It is claimed to be 1-Mbit resistive memory blocks. In general, mastering the production of ReRAM with 28 nm technological standards quadruples the density of this memory option (obviously in relation to Weebit technologies, since ReRAM is being developed in many options, including the notorious HP memristor).
We add that the Weebit Nano ReRAM pilot production within the 28-nm process technology was supposed to start at the end of 2019. But then this did not happen, just as the promised production of ReRAM in South Korea at the end of 2020 by “one large company” did not begin. Instead, a month ago, Weebit signed an agreement to launch ReRAM production as part of a 130nm process at the American SkyWater plant.
It seems that the Weebit technology does not fit well with advanced manufacturing processes. We hope that moving forward together with French researchers will bring resistive memory technology closer to commercial implementation. ReRAM memory is close to RAM in terms of speed, but at the same time it has non-volatility like flash memory. This is the most important factor for the development of the future of electronics.