Micron introduced 128GB DDR5 8000 modules on advanced monolithic chips and

Micron introduced 128GB DDR5-8000 modules on advanced monolithic chips and shared plans for the future

Micron has introduced registered random access memory modules (RDIMMs) for 128GB servers that can operate at speeds of up to 8,000 MT/s. They use 32 Gigabit DDR5 monolithic chips manufactured using 1β (1-Beta) process technology, the manufacturer’s most advanced. Mass production of these RAM modules will begin next year. The company also shared its plans for the future.

    Image source: Micron

Image source: Micron

According to the company, the technology for producing monolithic 32 gigabit DDR5 memory chips offers a number of advantages over the competing 3DS TSV (Through-Silicon Via) technology. This means that the new chips can increase bit density by more than 45%, increase energy efficiency by up to 24%, reduce latency by up to 16% and increase efficiency in AI training tasks by up to 3% up to 28% are announced. By eliminating the 3DS TSV, Micron was able to better optimize input buffers and critical I/O circuits and reduce pin capacitance on the data lines.

Micron has historically doubled the density of monolithic memory chips about every three years. With the further development of technology, the manufacturer plans to switch to the production of monolithic 48 gigabit and 64 gigabit memory crystals, which will open the prospect of producing RAM modules with a capacity of 1 TB.

In addition to announcing RDMIMM DDR5-8000 memory modules on 32GB 1β memory chips, the company also released updated plans for future product releases. Mass production of 16 gigabit and 24 gigabit GDDR7 memory chips with a data transfer rate of 32 GT/s (gigatransfers per second) is expected to begin in mid-2024.

From 2024, the company also plans to start producing RDIMM, MCRDIMM and CXL memory solutions with capacities of 128-256 GB, and from 2026 with capacities of more than 256 GB. Starting in 2026, the manufacturer will also produce energy-efficient LPCAMM2 memory modules with capacities of up to 192 GB and speeds of up to 9600 MT/s. In addition, there are plans to release HBM4 and HBM4E memory. This new generation of high-performance storage is expected to offer bandwidths from 1.5 TB/s to over 2 TB/s per stack in capacities from 36 GB to 64 GB.


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Dylan Harris

Dylan Harris is fascinated by tests and reviews of computer hardware.

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