Intel aims to release a chip with 1 trillion transistors

Intel aims to release a chip with 1 trillion transistors after 2030, but this will require new materials and packaging

At the IEEE International Electron Devices Meeting (IEDM) 2022 event, Intel shared its achievements in the development and production of chips used for “to follow Moore’s Law on the way to a trillion transistor chip in the next decade“In particular, Intel spoke about the development of new 3D packages, innovative materials to increase the density of transistors and new solutions to improve energy efficiency and memory in high-performance computing.

75 years after the invention of the transistor, the innovations at the heart of Moore’s Law continue to meet the exponentially growing global demand for computers. At IEDM 2022, Intel is showcasing both the forward-looking and tangible research advances needed to overcome current and future obstacles, meet insatiable demand, and sustain Moore’s Law for years to come.said Gary Patton, Intel vice president and general manager of component research and design.

At IEDM 2022, the Intel Components Research Group demonstrated its commitment to innovation in three key areas to comply with Moore’s Law. Researchers at the Intel Components Research Group have found new materials and technologies that “blur the line between packaging and crystal‘, which will allow the company to combine a trillion transistors on a single substrate.

First, it is extremely difficult to make a chip with a trillion transistors, so it would be much more practical to combine several chips (chiplets) on one substrate, but this requires innovative packaging technologies. As mentioned in the press release, Intel is ready to offer 3D chip packaging technology with “10-fold increase in density“, compared to the solutions presented by the company at IEDM 2021.

The company also found that scaling hybrid packaging to levels of 3 microns “will offer the same density and throughput as in monolithic chips such as single-chip platforms“. In other words, Intel will try to ensure that there is no difference between a monolithic chip and a stack of multiple chips.

Second, Intel is looking at ultra-thin “two-dimensional” materials to fit more transistors on a single chip. Intel has demonstrated a multilayer structure of nanosheets surrounded by gate transistors (GAA) made of a “two-dimensional” material just 3 atoms thick. Intel has also demonstrated near-perfect switching of transistors on a dual-gate structure at room temperature with low leakage current. These are the two key breakthroughs needed to unify GAA transistors and overcome the fundamental limitations of silicon chips.

Researchers also presented the first comprehensive analysis of electrical contact topologies for 2D materials, which will help pave the way for high-performance and scalable transistor circuits.

Third, Intel is offering new ways to improve power efficiency and improve memory in the HPC space. To make better use of on-chip real estate, Intel is rethinking scaling by designing memory that can be stacked vertically across transistors – somewhat reminiscent of AMD 3D V-Cache, but Intel’s tech has a notable cast as it’s multi -Layering within a single chip provides . Intel noted that it has demonstrated, for the first time in the industry, multilayer ferroelectric capacitors that achieve the performance of traditional ferroelectric capacitors and can be used to build FeRAM over a logic chip.

Intel also showedindustry-first device-level model capturing mixed phases and defects for advanced hafnium-based ferroelectric devices‘, and that points to ‘significant advances by Intel in supporting industry tools for the development of new memory devices and ferroelectric transistors“.

Intel also said it paves the way for mass production of GaN transistor-based power electronics on 300mm (GaN-on-Silicon) wafers. It is reported that thisoffer a 20x improvement over existing GaN technologies and set an industry quality record for high-performance power supplies“.

Intel also boasted of breakthroughs in super power efficient technologies. In particular, the company said it has developed transistors that “Don’t forget anything and keep the data even when the device is switched off“.”Intel researchers have already overcome two of the three obstacles preventing the technology from becoming fully functional and functional at room temperature.“, says the press release.

Finally, fourth, Intel noted that it continues to introduce new concepts and offer the best qubits for quantum computing. Intel researchers are working to find the best ways to store quantum information by collecting various data on how the environment affects the quantum data stored in one way or another.


About the author

Dylan Harris

Dylan Harris is fascinated by tests and reviews of computer hardware.

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