Back in November last year, the Chinese company YMTC announced the start of mass production of 232-layer QLC 3D NAND memories, ahead of competitors such as Kioxia and SK hynix. Even Micron Technology, with its 232-layer TLC 3D NAND memory, is slightly behind its Chinese competitor, which has long been under US sanctions. This week, evidence emerged that YMTC’s advanced storage is already being used in production SSDs.
The same company TechInsightsThe company, which at the end of the summer received evidence of the presence of 7nm HiSilicon Kirin processors in Huawei smartphones of the Mate 60 family, last week published a report on the study of the 1TB released in July -Solid state drive ZhiTai Ti600 without much advertising. This drive uses 232-layer YMTC QLC 3D NAND memory. According to TechInsights experts, these memory chips offer the highest information storage density of any chip released in commercial quantities, namely 19.8 Gbit/mm2.
YMTC is known to have made progress in this area through the use of Xtacking 3.0 technology, which enables the formation of 3D NAND memory chips with so many layers. Rival companies Micron and Solidigm (Intel) are currently developing 232-layer QLC 3D NAND memory, and the former already has 232-layer TLC 3D NAND in its arsenal, but is inferior to the YMTC solution in terms of data storage density the use of three bits per cell instead of four.
Largest memory maker Samsung Electronics has abandoned development of eighth-generation 236-layer QLC 3D NAND memories and instead focused on ninth-generation QLC and TLC chips. SK hynix specializes in TLC 3D NAND memory, which is also inferior to YMTC products in terms of data storage density at a certain stage. It turns out that under the conditions of sanctions, the Chinese company managed to launch the production of advanced QLC 3D NAND memory, surpassing all competitors in terms of information storage density.